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Infineon IGBT Module FF200R12KT4
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Specifications
| Brand | Infineon |
|---|---|
| Model Number | FF200R12KT4 |
| Official Product Name | IGBT Module 1200V 200A Dual |
| Applicable System | Industrial drives, inverters, power supplies |
| Product Type | IGBT Module |
| Equivalent Standard | 62mm package, half-bridge topology |
| Product Status | In Stock |
| Continuous DC Collector Current (IC) | 200A at Tc=80°C |
| Pulsed Collector Current (ICRM) | 400A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.1V typical at IC=200A, VGE=15V |
| Gate-Emitter Voltage (VGES) | ±20V |
| Total Power Dissipation (Ptot) | 1250W at Tc=25°C |
| Junction Temperature (Tj) | -40°C to 150°C |
| Storage Temperature (Tstg) | -40°C to 125°C |
| Isolation Voltage (VISO) | 2500V AC, 1 minute |
| Module Package | 62mm (DIP-1) |
| Mounting Torque | 3-5 Nm (main terminals), 3-5 Nm (mounting) |
| Weight | 340g |
| Collector-Emitter Voltage (VCE) | 1200V |
Product Description
Home > Products > Infineon > IGBT Modules Need Infineon FF200R12KT4? IGBT Module for Industrial drives, inverters, power supplies. Supplied with full traceability and documentation. Request a quote... Price & Availability Contact us for pricing / 询价 It belongs to the well-established 1200V IGBT family, featuring a 200A collector current rating per switch. The module integrates two IGBTs with anti-parallel diodes in a half-bridge configuration, making it ideal for three-phase inverters, motor drives, and power supplies. Its robust design ensures reliable operation under demanding conditions, with a maximum junction temperature of 150°C and a low thermal resistance for efficient heat dissipation. This module utilizes Infineon's advanced Trench IGBT technology, which provides low saturation voltage (VCE(sat)) and fast switching characteristics. The FF200R12KT4 offers a collector-emitter saturation voltage of typically 2.1V at 200A, reducing conduction losses and improving overall system efficiency. The integrated freewheeling diodes are optimized for soft recovery, minimizing electromagnetic interference and switching losses. The module is housed in a compact 62mm package, which is industry-standard and allows for easy mounting and replacement. The FF200R12KT4 is widely used in applications such as motor control, renewable energy inverters, and industrial power supplies. Its high power density and reliability make it a preferred choice for engineers designing high-power systems. With a UL recognized component status and compliance with RoHS standards, this module meets international safety and environmental requirements. Whether for new designs or as a replacement part, the FF200R12KT4 offers proven performance and longevity. The Infineon FF200R12KT4 is a high-performance dual IGBT module designed for industrial power conversion applications. Basic Product Information Low VCE(sat) for reduced conduction losses Fast switching with soft recovery diodes Industry-standard 62mm package UL recognized and RoHS compliant Maximum junction temperature 150°C High power density with 1200V/200A rating Technical Specifications Version & Model Difference The FF200R12KT4 is part of Infineon's 1200V IGBT module family. It is a standard-speed module with a 200A rating. Compared to the FF200R12KS4 (which has a different diode), the KT4 version features improved switching characteristics and lower thermal resistance. The 'T4' suffix indicates the Trench IGBT technology, which offers lower conduction losses than earlier generations. For higher frequency applications, Infineon offers the FF200R12KE4 (with faster diodes) or the FF200R12ME4 (with medium-speed diodes). The KT4 is optimized for general-purpose industrial drives and inverters. Application Scenarios What is the typical VCE(sat) of this IGBT module? The typical collector-emitter saturation voltage is 2.1V at a collector current of 200A and a gate-emitter voltage of 15V. This low saturation voltage helps reduce conduction losses and improve efficiency. Can I use the FF200R12KT4 as a replacement for other IGBT modules? Yes, it can replace many 1200V/200A dual IGBT modules in 62mm packages, such as the Fuji 2MBI200U4A-120 or Mitsubishi CM200DY-12NF. However, always check the gate drive requirements, switching frequency, and thermal design to ensure compatibility. What is the isolation voltage of the module? The module has an isolation voltage (VISO) of 2500V AC for 1 minute between the terminals and the baseplate. This ensures safe operation in high-voltage systems when properly mounted with appropriate insulation. What is the maximum current rating of the FF200R12KT4? The continuous DC collector current (IC) is 200A at a case temperature of 80°C. The pulsed current (ICRM) can reach 400A for short durations, depending on the switching frequency and thermal conditions. INFINEON FF200R12KE3 IGBT Module (BLOCK, IGBT FF200R12KE3, INFINEON) INFINEON FF1400R12IP4 IGBT Module (BLOCK, IGBT FF1400R12IP4, INFINEON) Infineon IKCS12F60B2A CIPOS Module Infineon/Fuji 1MBI600V-120-50 IGBT Module 600A 1200V Infineon FP75R12KE3 IGBT Module 1200V 75A Infineon FF1400R12IP4 IGBT Module (FF1400R12IP4) Infineon FF200R12KE3 IGBT Module (FF200R12KE3) Infineon DDB6U215N16L IGBT Module
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