FF200R12KT4

Product Description

It belongs to the well-established 1200V IGBT family, featuring a 200A collector current rating per switch. The module integrates two IGBTs with anti-parallel diodes in a half-bridge configuration, making it ideal for three-phase inverters, motor drives, and power supplies. Its robust design ensures reliable operation under demanding conditions, with a maximum junction temperature of 150°C and a low thermal resistance for efficient heat dissipation. This module utilizes Infineon's advanced Trench IGBT technology, which provides low saturation voltage (VCE(sat)) and fast switching characteristics. The FF200R12KT4 offers a collector-emitter saturation voltage of typically 2.1V at 200A, reducing conduction losses and improving overall system efficiency. The integrated freewheeling diodes are optimized for soft recovery, minimizing electromagnetic interference and switching losses. The module is housed in a compact 62mm package, which is industry-standard and allows for easy mounting and replacement. The FF200R12KT4 is widely used in applications such as motor control, renewable energy inverters, and industrial power supplies. Its high power density and reliability make it a preferred choice for engineers designing high-power systems. With a UL recognized component status and compliance with RoHS standards, this module meets international safety and environmental requirements. Whether for new designs or as a replacement part, the FF200R12KT4 offers proven performance and longevity. The Infineon FF200R12KT4 is a high-performance dual IGBT module designed for industrial power conversion applications.

Basic Product Information

• Low VCE(sat) for reduced conduction losses
• Fast switching with soft recovery diodes
• Industry-standard 62mm package
• UL recognized and RoHS compliant
• Maximum junction temperature 150°C
• High power density with 1200V/200A rating

Technical Specifications

Version & Model Difference

The FF200R12KT4 is part of Infineon's 1200V IGBT module family. It is a standard-speed module with a 200A rating. Compared to the FF200R12KS4 (which has a different diode), the KT4 version features improved switching characteristics and lower thermal resistance. The 'T4' suffix indicates the Trench IGBT technology, which offers lower conduction losses than earlier generations. For higher frequency applications, Infineon offers the FF200R12KE4 (with faster diodes) or the FF200R12ME4 (with medium-speed diodes). The KT4 is optimized for general-purpose industrial drives and inverters.

Application Scenarios

• INFINEON FF200R12KE3 IGBT Module (BLOCK, IGBT FF200R12KE3, INFINEON)
• INFINEON FF1400R12IP4 IGBT Module (BLOCK, IGBT FF1400R12IP4, INFINEON)
• Infineon IKCS12F60B2A CIPOS Module
• Infineon/Fuji 1MBI600V-120-50 IGBT Module 600A 1200V
• Infineon FP75R12KE3 IGBT Module 1200V 75A
• Infineon FF1400R12IP4 IGBT Module (FF1400R12IP4)
• Infineon FF200R12KE3 IGBT Module (FF200R12KE3)
• Infineon DDB6U215N16L IGBT Module