FF1400R12IP4

Product Description

It belongs to the IGBT4 series, featuring a 1200V collector-emitter voltage and a 1400A collector current rating. The module utilizes trench field-stop IGBT technology and an emitter-controlled diode, providing low switching losses and high reliability. Its compact 62mm package with a base plate ensures excellent thermal performance and easy mounting. This dual-switch (half-bridge) module is optimized for high-frequency switching in applications such as motor drives, wind turbine converters, and industrial power supplies. The module's internal structure includes a positive temperature coefficient (PTC) thermistor for temperature monitoring, enabling effective thermal management. With a maximum junction temperature of 150°C and a low thermal resistance, the FF1400R12IP4 ensures stable operation even under heavy load conditions. The FF1400R12IP4 is part of Infineon's PrimePACK? series, known for its robustness and long service life. It is designed to meet international standards, including UL recognition, and is suitable for both new designs and replacements in existing systems. Whether used in traction or renewable energy converters, this IGBT module delivers consistent performance and durability, making it a trusted choice for engineers worldwide. The Infineon FF1400R12IP4 is a high-power IGBT module designed for demanding industrial applications.

Basic Product Information

• Trench field-stop IGBT4 technology for low switching losses
• Emitter-controlled diode with soft switching behavior
• Integrated NTC thermistor for temperature monitoring
• Compact 62mm package with base plate for efficient cooling
• Maximum junction temperature of 150°C for high reliability
• High current rating of 1400A at 1200V

Technical Specifications

Version & Model Difference

The FF1400R12IP4 is part of Infineon's IGBT4 series, which supersedes earlier IGBT3 modules. Compared to IGBT3, the IGBT4 offers lower saturation voltage (V_CE(sat)) and reduced switching losses, enabling higher efficiency and higher switching frequencies. The module also features an improved emitter-controlled diode with softer recovery behavior, reducing EMI. The package design is similar to previous 62mm modules, but the internal layout has been optimized for better thermal performance. There are no major version differences within the FF1400R12IP4 itself, but it is important to verify the date code and any manufacturer updates for specific applications.

Application Scenarios

• INFINEON FF200R12KE3 IGBT Module (BLOCK, IGBT FF200R12KE3, INFINEON)
• INFINEON FF200R12KT4 IGBT Module (BLOCK, IGBT FF200R12KT4, INFINEON)
• Infineon IKCS12F60B2A CIPOS Module
• Infineon/Fuji 1MBI600V-120-50 IGBT Module 600A 1200V
• Infineon FP75R12KE3 IGBT Module 1200V 75A
• Infineon FF200R12KE3 IGBT Module (FF200R12KE3)
• Infineon FF200R12KT4 IGBT Module (FF200R12KT4)
• Infineon DDB6U215N16L IGBT Module